Dielectric relaxation in nanopillar NiFe-silicon structures in high magnetic fields

Current Applied Physics

Volumn 7, Issue 1, 2007, Pages 34-38

  Vasic, R ^a   Brooks, J S ^a   Jobiliong, E ^a   Aravamudhan, S ^b   Luongo, K ^b   Bhansali, S ^b  

^a Florida State University   (United States)

^b UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

Dielectric relaxation; High magnetic fields; Nanostructured silicon; NiFe nanowires; Si:P

Indexed keywords

ACTIVATION ENERGY; APPROXIMATION THEORY; MAGNETIC FIELDS; NANOSTRUCTURED MATERIALS; RESONANCE; SILICON;

DIPOLAR RELAXATIONS; HIGH MAGNETIC FIELDS; NANOSTRUCTURED SILICON;

DIELECTRIC RELAXATION;

EID: 33749427407     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2005.08.002     Document Type: Article

References (13)

1. S. Aravamudhan, K. Luongo, S. Bhansali, P. Poddar, H. Srikanth, Metall. Mater. Trans. A, in review.
2. Hickmott T.W. Phys. Rev. B 32 (1985) 6531
3. Hickmott T.W. Phys. Rev. B 38 (1988) 12404
4. Hickmott T.W. Phys. Rev. B 44 (1991) 13487
5. Hickmott T.W. Phys. Rev. B 46 (1992) 12342
6. Aymeloglu S., and Zemel J.N. IEEE Trans. Electron. Dev. ED-23 (1976) 466
7. Fert A., and Piraux L. J. Magn. Magn. Mater. 200 (1999) 338-358
8. Safarik I., and Safarikova M. J. Chromatogr. 722 (1999) 33
9. Reich D.H., Tanase M., Hultgren A., Bauer L.A., Chen C.S., and Meyer G.J. J. Appl. Phys. 93 (2003) 7275
10. Debye P. Phys. Z. 13 (1912) 97
11. Hill N.E., Vaughn W.E., Price A.H., and Davies M. Dielectric Properties and Molecular Behavior (1969), Van Nostrand Reinhold, London
12. Cole K.S., and Cole R.H. J. Chem. Phys. 9 (1941) 341
13. Yafet Y., Keyes W., and Adams E.N. J. Phys. Chem. Solids 1 (1956) 137