Pseudopotential-based full zone k · p technique for indirect bandgap semiconductors: Si, Ge, diamond and SiC

Turkish Journal of Physics

Volumn 30, Issue 4, 2006, Pages 287-294

  Bulutay, Ceyhun ^a  

^a BILKENT UNIVERSITY   (Turkey)

Author keywords

Band structure; Indirect bandgap semiconductors; Pseudopotentials

Indexed keywords

BAND STRUCTURE; DIAMONDS; MATRIX ALGEBRA; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICON CARBIDE;

BANDGAP SEMICONDUCTORS; BRILLOUIN ZONES; MOMENTUM MATRIX ELEMENTS; PSEUDOPOTENTIAL METHODS;

SEMICONDUCTOR MATERIALS;

EID: 33749389466     PISSN: 13000101     EISSN: 13000101     Source Type: Journal    
DOI: None     Document Type: Article

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