Extreme latchup susceptibility in modern Commercial-off-the-Shelf (COTS) monolithic 1M and 4M CMOS Static Random-Access Memory (SRAM) devices

IEEE Radiation Effects Data Workshop

Volumn , Issue , 2005, Pages 1-7

  Page Jr , Thomas E ^a   Benedetto, Joseph M ^b  

^a RAYTHEON COMPANY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Commercial off the shelf (COTS); Heavy ions; Linear energy transfer (LET); Neutron induced latchup (NIL); Single event effects (SEE); Single event latchup (SEL); Static random access memory (SRAM)

Indexed keywords

COMMERCIAL-OFF-THE-SHELF (COTS); NEUTRON-INDUCED LATCHUP (NIL); SINGLE EVENT EFFECTS (SEE); SINGLE-EVENT LATCHUP (SEL);

CMOS INTEGRATED CIRCUITS; DATA STORAGE EQUIPMENT; ENERGY TRANSFER; FLIP FLOP CIRCUITS; HEAVY IONS; SENSITIVITY ANALYSIS;

STATIC RANDOM ACCESS STORAGE;

EID: 33749378263     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/REDW.2005.1532657     Document Type: Conference Paper

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