Photochemical reactions of silsesquioxane-based resists for arf excimer-laser lithography

Journal of Photopolymer Science and Technology

Volumn 9, Issue 3, 1996, Pages 533-540

  Morisawa, Taku ^a   Fukuda, Hiroshi ^a   Shiraishi, Hiroshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749284610     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.9.533     Document Type: Article

References (13)

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3. M.Nakase, T.Naito, K.Asakawa, A.Hongu, N.Shida, and T.Ushirogouchi, Chemically amplified ArF excimer laser resists using the absorption band shift method, Proc.SPIE 2438, pp445-454 (1995).
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9. T.Morisawa and H.Fukuda, Direct Formation of Hard Masks using Photooxidation of Polysilsesquioxane for ArF Excimer Laser Lithography, First Intn'l Symp. of ArF excimer laser lithography organized by SEMATECH, Aug. 1995 at Colorado Springs.
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