Evaluation of a new environmentally stable positive tone chemically amplified deep-UV resist

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2195, Issue , 1994, Pages 37-46

  Huang, Wu Song ^a   Kwong, Ranee W ^a   Katnani, Ahmad D ^a   Khojasteh, Mahmoud ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTORESISTS;

BAKING TEMPERATURE; CHEMICALLY AMPLIFIED; CHEMICALLY AMPLIFIED RESIST; DEEP-UV LITHOGRAPHY; HIGH SENSITIVITY; LINEWIDTH VARIATIONS; POSTEXPOSURE BAKE; PROCESS LATITUDES;

LINEWIDTH;

EID: 33749268952     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.175370     Document Type: Conference Paper

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