Comparison of X-band MESFET and HBT class-e power amplifiers for EER transmitters

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 2031-2034

  Pajić, Srdjan ^a   Wang, Narisi ^a   Popović, Zoya ^a  

^a UCB 450   (United States)

Author keywords

MESFET power amplifiers; Microwave devices; Microwave power amplifiers; Microwave power bipolar transistor amplifiers

Indexed keywords

HYBRID MICROWAVES; MESFET POWER AMPLIFIERS; MICROWAVE POWER AMPLIFIERS; MICROWAVE POWER BIPOLAR TRANSISTOR AMPLIFIERS;

HYBRID INTEGRATED CIRCUITS; MESFET DEVICES; MICROWAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SWEEP CIRCUITS; TRANSMITTERS;

POWER AMPLIFIERS;

EID: 33749265678     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1517144     Document Type: Conference Paper

References (10)

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