Terahertz transmission characteristics of high-mobility GaAs and InAs two-dimensional-electron-gas systems

Applied Physics Letters

Volumn 89, Issue 13, 2006, Pages

  Kabir, N A ^a   Yoon, Y ^a   Knab, J R ^b   Chen, J Y ^b   Markelz, A G ^b   Reno, J L ^c   Sadofyev, Y ^d   Johnson, S ^d   Zhang, Y H ^d   Bird, J P ^a  

^a the State University of New York   (United States)

^b UNIVERSITY AT BUFFALO   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

DRUDE MODELS; GAAS; MOMENTUM RELAXATIONS; TWO-DIMENSIONAL-ELECTRON-GAS (2DEG) SYSTEMS;

ELECTRIC CONDUCTIVITY; ELECTRON GAS; NATURAL FREQUENCIES; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS; TIME DOMAIN ANALYSIS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33749260489     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357605     Document Type: Article

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