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Volumn 72, Issue 1, 2005, Pages

Role of Ag doping in Ba8Si46 compounds

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EID: 33749159261     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.014511     Document Type: Article
Times cited : (20)

References (38)
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    • The pDOS of Ba 5d, however, decreases in Ba8Ag1Si45 owing to the change in the occupied Ba state from 5d to the admixture of 6s character, as shown in the Ba 4d core-level photoemission. The larger intensity in the difference spectrum of Ba8Ag1Si45 than that of Ba8Si46 in the energy range up to 2.5eV likely results from the different extent of the enhancement between Ba 5d and 6s states in the on-resonance, while the variation in the total electron count of Ba in the valence band also influences the enhancement in the on resonance.
    • The pDOS of Ba 5d, however, decreases in Ba8Ag1Si45 owing to the change in the occupied Ba state from 5d to the admixture of 6s character, as shown in the Ba 4d core-level photoemission. The larger intensity in the difference spectrum of Ba8Ag1Si45 than that of Ba8Si46 in the energy range up to 2.5eV likely results from the different extent of the enhancement between Ba 5d and 6s states in the on-resonance, while the variation in the total electron count of Ba in the valence band also influences the enhancement in the on resonance.
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