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Physical Review B

Volumn 21, Issue 8, 1980, Pages 3589-3596

Amorphous SixGe1-xO2. I. Electronic structure

(2) Martinez E a Yndurain, Félix a

a UNIVERSIDAD AUTÓNOMA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749064366 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.21.3589 Document Type: Article

Times cited : (6)

References (17)

1
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3
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4
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5
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6
- 25944467554
- Photoemission Measurements of the Valence Levels of Amorphous SiO2
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7
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8
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9
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- Interscience, New York
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17
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- Proceedings of the 8th International Conference on Amorphous and Liquid Semiconductors, Cambridge, Mass., 1979
- to appear in
- J. Non-Cryst. Solids
- Martínez, E.¹ Ynduráin, F.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.