Dielectric properties, conduction mechanism, and possibility of nanodomain state with quantum dot formation in impurity-doped gamma-irradiated incommensurate TlInS 2

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 11, 2006, Pages 2845-2851

  Sardarly, R M ^a   Mamedov, N T ^a,b   Wakita, K ^b   Shim, Y ^b   Nadjafov, A I ^a   Samedov, O A ^a   Zeynalova, E A ^a  

^a INSTITUTE OF PHYSICS   (Azerbaijan)

^b Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION PROPERTIES; GAMMA IRRADIATION; SUPERSTRUCTURE; TLINS2;

CRYSTAL IMPURITIES; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GAMMA RAYS; IRRIGATION; PHASE TRANSITIONS; SEMICONDUCTOR QUANTUM DOTS; THALLIUM COMPOUNDS;

NANOSTRUCTURED MATERIALS;

EID: 33749019990     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200669522     Document Type: Article

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