Excitonic giant zeeman effect in wide gap diluted magnetic semiconductors based on ZnO and GaN

Acta Physica Polonica A

Volumn 110, Issue 3, 2006, Pages 303-309

  Pacuski, W ^a,b   Ferrand, D ^b   Kossacki, P ^a,b   Marcet, S ^b   Cibert, J ^c   Gaj, J A ^a   Golnik, A ^a  

^a UNIVERSITY OF WARSAW   (Poland)

^b UNIV GRENOBLE ALPES   (France)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; EXCITONS; ION EXCHANGE; MAGNETIC FIELD EFFECTS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GALLIUM ARSENIDE; ZINC OXIDE;

ENERGY SHIFTS; OSCILLATOR STRENGTHS; WIDE GAP DILUTION; ZEEMAN EFFECTS;

MAGNETIC SEMICONDUCTORS;

EID: 33748996204     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.110.303     Document Type: Article

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