Erratum: Effective dielectric constant of nanostructured Si layers (Applied Physics Letters (2006) 88 (173117))

Applied Physics Letters

Volumn 89, Issue 12, 2006, Pages

  Delerue, C ^a   Allan, G ^a  

^a INSTITUT D ELECTRONIQUE   (France)

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EID: 33748968890     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2354315     Document Type: Erratum

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