Metal-insulator transition in the In/Si(1 1 1) surface

Surface Science

Volumn 600, Issue 18, 2006, Pages 3821-3824

  Riikonen, S ^a,b   Ayuela, A ^b   Sanchez Portal D ^b,c  

^a UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^b DONOSTIA INTERNATIONAL PHYSICS CENTER DIPC   (Spain)

^c CENTRO MIXTO CSIC UPV EHU   (Spain)

Author keywords

Density functional calculations; Indium; Phase transition; Silicon

Indexed keywords

INDIUM; MATHEMATICAL MODELS; PHASE TRANSITIONS; PROBABILITY DENSITY FUNCTION; SILICON;

AB INITIO CALCULATIONS; ELECTRONIC DRIVING FORCE; STRUCTURAL DISTORTIONS; SURFACE BANDS;

METAL INSULATOR TRANSITION;

EID: 33748926251     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.01.092     Document Type: Article

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