Silicon adsorption in defective carbon nanotubes: A first principles study

Nanotechnology

Volumn 17, Issue 16, 2006, Pages 4088-4091

  Da Silva, L B ^a   Fagan, Solange B ^b   Mota, R ^a,c   Fazzio, A ^d  

^a FEDERAL UNIVERSITY OF SANTA MARIA   (Brazil)

^b CENTRO UNIVERSITÁRIO FRANCISCANO   (Brazil)

^c UNIVERSITY OF BRASILIA   (Brazil)

^d UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ATOMS; BAND STRUCTURE; ELECTRONIC PROPERTIES; NANOTECHNOLOGY; PROBABILITY DENSITY FUNCTION; SILICON COMPOUNDS;

CHARGE DENSITIES; NANOTUBE GEOMETRY; SILICON ATOMS; SINGLE-WALLED CARBON NANOTUBE (SWNT);

CARBON NANOTUBES;

EID: 33748915880     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/16/016     Document Type: Article

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