NO sensing characteristics of ZnO-NiO junction structure with intervening SiO2 layer

Denki Kagaku

Volumn 64, Issue 12, 1996, Pages 1293-1296

  Koshizaki, Naoto ^a   Suga, Kazuo ^b   Yasumoto, Katsuya ^a  

^a NATL INST OF MAT AND CHEM RES   (Japan)

^b YOKOHAMA RUBBER CO LTD   (Japan)

Author keywords

Junction Structure; Nitrogen Oxide Sensor; Oxide Semiconductor; SiO2 Intervention

Indexed keywords

EID: 33748876561     PISSN: 03669297     EISSN: None     Source Type: Journal    
DOI: 10.5796/kogyobutsurikagaku.64.1293     Document Type: Article

References (6)

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