Optical and electronic properties of doped silicon from 0.1 to 2 THz

Applied Physics Letters

Volumn 56, Issue 17, 1990, Pages 1694-1696

  Van Exter, Martin ^a   Grischkowsky, D ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

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EID: 33748855070     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.103120     Document Type: Article

References (14)