Gain flattened erbium-doped amplifier with 34 nm flat bandwidth

Electronics Letters

Volumn 42, Issue 19, 2006, Pages 1086-1088

  Yeh, C H ^a   Lin, M C ^b   Chi, S ^b,c  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c University of Yuan Ze   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ERBIUM COMPOUNDS; GAIN MEASUREMENT; SPURIOUS SIGNAL NOISE; VARIATIONAL TECHNIQUES; WAVEGUIDES;

INPUT SATURATION POWER; WAVEGUIDE AMPLIFIERS;

AMPLIFIERS (ELECTRONIC);

EID: 33748784076     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20062334     Document Type: Article

References (11)

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