Temperature programmed desorption of F-doped SnO2 films deposited by inverted pyrosol technique

Journal of Thermal Analysis and Calorimetry

Volumn 85, Issue 3, 2006, Pages 811-815

  Aukkaravittayapun, S ^a   Thanachayanont, C ^a   Theapsiri, T ^b   Veerasai, W ^b   Sawada, Y ^c   Kondo, T ^c   Tokiwa, S ^d   Nishide, T ^d  

^a NATIONAL METAL AND MATERIALS TECHNOLOGY CENTER   (Thailand)

^b Mahidol University   (Thailand)

^c TOKYO POLYTECHNIC UNIVERSITY   (Japan)

^d NIHON UNIVERSITY   (Japan)

Author keywords

F doped SnO2; Inverted pyrosol; Temperature programmed desorption

Indexed keywords

ELECTRIC CONDUCTIVITY; HALL EFFECT DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SILICON WAFERS; TEMPERATURE PROGRAMMED DESORPTION;

FLUORINE-DOPED TIN DIOXIDE (FTO) FILMS; INVERTED PYROSOL; QUADRUPLE MASS ANALYZER; RESISTIVITY MEASUREMENT;

TIN COMPOUNDS;

EID: 33748760107     PISSN: 13886150     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10973-006-7556-8     Document Type: Conference Paper

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