Growth morphology and magnetism of MnAs/GaAs(001) epilayers

Journal of Magnetism and Magnetic Materials

Volumn 226-230, Issue PART II, 2001, Pages 1577-1579

  Etgens, V H ^a   Eddrief, M ^a   Mosca, D H ^b   Marangolo, M ^a   George, J M ^c  

^a SORBONNE UNIVERSITÉ   (France)

^b FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

^c INSTITUT D'OPTIQUE GRADUATE SCHOOL   (France)

Author keywords

Heterostruotures; Semiconductors ferromagnetic; Tunneling

Indexed keywords

ELECTRON TUNNELING; GALLIUM ARSENIDE; MAGNETISM; MANGANESE; SEMICONDUCTING GALLIUM;

EASY AXIS; GAAS(001); GROWTH MORPHOLOGY; HETEROSTRUOTURES; MAGNETIZATION MEASUREMENTS; RECONSTRUCTED SURFACES; SEMICONDUCTORS-FERROMAGNETIC; [110] DIRECTION;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 33748710833     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-8853(01)00009-9     Document Type: Article

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