Electromagnetic manipulation for the anti-Zeno effect in an engineered quantum tunneling process

Physical Review A - Atomic, Molecular, and Optical Physics

Volumn 74, Issue 3, 2006, Pages

  Zhou, Lan ^a,b   Hu, F M ^c   Lu, Jing ^b   Sun, C P ^a  

^a INSTITUTE OF THEORETICAL PHYSICS   (China)

^b HUNAN NORMAL UNIVERSITY   (China)

^c CAPITAL NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TUNNELING; MAGNETIC FLUX; MATHEMATICAL MODELS; SEMICONDUCTOR QUANTUM DOTS;

ANTI-ZENO EFFECT; FANO-LEE MODEL; QUANTUM TUNNELING;

QUANTUM THEORY;

EID: 33748565601     PISSN: 10502947     EISSN: 10941622     Source Type: Journal    
DOI: 10.1103/PhysRevA.74.032102     Document Type: Article

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