Enhancing power electronic devices with wide bandgap semiconductors

International Journal of High Speed Electronics and Systems

Volumn 16, Issue 2, 2006, Pages 545-556

  Ozpineci, Burak ^a   Chinthavali, Madhu Sudhan ^b   Tolbert, Leon M ^a,c  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b OAK RIDGE INSTITUTE FOR SCIENCE AND EDUCATION   (United States)

^c UNIVERSITY OF TENNESSEE   (United States)

Author keywords

JFET; MOSFET; Schottky diode; SiC

Indexed keywords

SILICON PN DIODE; SWITCHING SPEEDS; TEMPERATURE RANGE; UNIPOLAR DEVICES;

ELECTRIC BREAKDOWN; JUNCTION GATE FIELD EFFECT TRANSISTORS; MOSFET DEVICES; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

SEMICONDUCTOR DEVICES;

EID: 33748444759     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156406003837     Document Type: Conference Paper

References (16)

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