On the possibility of an intersubband laser in silicon-on-insulator

International Journal of High Speed Electronics and Systems

Volumn 16, Issue 2, 2006, Pages 411-420

  Luryi, Serge ^a   Zaslavsky, Alex ^b  

^a Stony Brook University   (United States)

^b Brown University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; DIFFUSION; ELECTRIC INSULATORS; ELECTRON TUNNELING; ELECTRONS; OXIDES; POLYSILICON; SEMICONDUCTOR QUANTUM WELLS; SILICON COMPOUNDS; TRANSITION METALS;

IN-PLANE DIFFUSIVITY; INTERSUBBAND LASERS; TERAHERTZ LASERS; TUNNELING OXIDES;

LASER CHEMISTRY;

EID: 33748440804     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156406003746     Document Type: Conference Paper

References (26)

1. R. F. Kazarinov and R. Suris, "Electric and electromagnetic properties of semiconductors with a superlattice", Sov. Phys. Semicond. 5, 797 (1971).
2. J. Faist, F. Capasso, C. Sirtori, D. L. Sivco, A. L. Hutchinson, and A. Y. Cho, "Quantum cascade laser", Science 264, 553 (1994)
3. J. S. Yu, S. Slivken, A. Evans, L. Doris, and M. Razeghi, "High-power c-w operation of a 6 μm quantum cascade laser at room temperature", Appl. Phys. Lett. 83, 2503 (2003).
4. R. Köhler, A. Tredicucci, F. Beltram, H. Beere, E. Linfield, A. Davies, D. Ritchie, R. Iotti, and F. Rossi, "Terahertz semiconductor- heterostructure laser", Nature 417, 156 (2002).
5. M. Rochat, L. Ajili, H. Willenberg, J. Faist, H. Beere, G. Davies, E. Linfield, and D. Ritchie, "Low-threshold terahertz quantum-cascade lasers", Appl. Phys. Lett. 81, 1381 (2002).
6. B. Williams, H. Callebaut, S. Kumar, Q. Hu, and J. Reno, "3.4 THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation", Appl. Phys. Lett. 82, 1015 (2003).
7. A. Kastalsky, V. J. Goldman, and J. H. Abeles, "Possibility of infrared laser in resonanttunneling structure", Appl. Phys. Lett. 59, 2636 (1991).
8. An up-to-date discussion of THz cascade lasers is available in chapter 3 of Future Trends in Microelectronics: The Nano, the Giga, and the Ultra, S. Luryi, J. M. Xu, and A. Zaslavsky, eds., (Wiley, New York, 2004), pp. 283-390.
9. G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, J. Faist, K. Ensslin, D. Grützmacher, and E. Müller, "Intersubband photoluminescence from silicon-based quantum cascade structures", Science 290, 2277 (2000).
10. 0.8/Si quantum-cascade structures based on a bound-to-continuum transition", Appl. Phys. Lett. 81, 4700 (2002).
11. For an overview of SOI technology, see G. K. Celler and S. Cristoloveanu, "Frontiers of silicon-on-insulator", J. Appl. Phys. 93, 4955 (2003).
12. A. Zaslavsky, C. Aydin, S. Luryi, S. Cristoloveanu, D. Mariolle, D. Fraboulet, and S. Deleonibus, "Ultrathin silicon-on-insulator vertical tunneling transistor", Appl. Phys. Lett. 83, 1653 (2003).
13. S. Luryi, "Frequency limit of double-barrier resonant-tunneling oscillators", Appl. Phys. Lett. 47, 490 (1985).
14. S. Luryi, "Quantum capacitance devices", Appl. Phys. Lett. 52, 501 (1988).
15. F. Beltram, F. Capasso, S. Luryi, S.-N. G. Chu, A. Y. Cho, and D. L. Sivco, "Negative transconductance via gating of the quantum-well subbands in a resonant tunneling transistor", Appl. Phys. Lett. 53, 219 (1988).
16. J. H. Smet, C. G. Fonstad, and Q. Hu, "Intrawell and interwell intersubband transitions in multiple quantum wells for far-infrared sources", J. Appl. Phys. 79, 9305 (1996).
17. H. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers. Part A: Fundamental Principles (Academic Press, New York, 1978), pp. 54-57.
18. A. Ya. Shik, "Optical properties of semiconductor superlattices with complex band structures", Sov. Phys. Semicond. 6, 1110 (1973).
19. K. Seeger, Semiconductor Physics (Wiley, New York, 1973).
20. D. Since free-carrier absorption is inversely proportional to mobility, a modern clean Si sample would exhibit less absorption for the same free-carrier density.
21. S. Luryi and A. Zaslavsky, "Blue sky in SOI: new opportunities for quantum and hot-electron devices", Solid State Electronics 48, 877 (2004) discusses the use of low-barrier height dielectrics for tunneling barriers in SOI quantum devices.
22. D. Tsu, "Infrared optical constants of silicon dioxide thin films by measurements of R and T", J. Vac. Sci. Technol. B 18, 1796 (2000);
23. 2.
24. E. Suzuki, K. Ishii, S. Kanemaru, T. Maeda, T. Tsutsumi, T. Sekigawa, K. Nagai, and H. Hiroshima, "Highly suppressed short-channel effects in ultrathin SOI n-MOSFETs", IEEE Trans. Electron Dev. 47, 354 (2000).
25. D. Esseni, M. Mastrapasqua, G. K. Celler, F. H. Baumann, C. Fiegna, L. Selmi, and E. Sangiorgi, "Low field mobility of ultrathin SOI n- and p-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs," Tech. Digest IEDM (2000).
26. M. A. Green, "Silicon-on-insulator (SOI): A path for integration of silicon light emitters into future microelectronic chips?", in: Future Trends in Microelectronics: The Nano, the Giga, and the Ultra, S. Luryi, J. M. Xu, and A. Zaslavsky, eds., (Wiley, New York, 2004), pp. 243-252.