High pressure studies on silane to 210 GPa at 300 K: Optical evidence of an insulator-semiconductor transition

Journal of Physics Condensed Matter

Volumn 18, Issue 37, 2006, Pages 8573-8580

  Sun, Liling ^a,b   Ruoff, Arthur L ^a   Zha, Chang Sheng ^c   Stupian, Gary ^d  

^a School of Operations Research and Industrial Engineering   (United States)

^b INSTITUTE OF PHYSICS   (China)

^c Aerospace Corporation ^*  (United States)

^d AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; HIGH PRESSURE EFFECTS; LIGHT ABSORPTION; LIGHT REFLECTION; REFRACTIVE INDEX; SEMICONDUCTOR MATERIALS;

EXTINCTION COEFFICIENT; INSULATOR-SEMICONDUCTOR TRANSITION; MOLAR REFRACTION;

SILANES;

EID: 33748347503     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/18/37/015     Document Type: Article

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