Doping effects on the electrical conductivity of bismuth layered Bi 3TiNbO9-based ceramics

Journal of Applied Physics

Volumn 100, Issue 4, 2006, Pages

  Zhou, Zhiyong ^a   Dong, Xianlin ^a   Yan, Haixue ^b   Chen, Heng ^c   Mao, Chaoliang ^c  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BISMUTH COMPOUNDS; ELECTRIC CONDUCTIVITY; ENERGY GAP; REACTION KINETICS; SEMICONDUCTOR DOPING;

ACCEPTOR DOPANT; BAND GAP ENERGY; CONDUCTION MECHANISM; STATE REACTION METHOD;

CERAMIC MATERIALS;

EID: 33748323450     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2245210     Document Type: Article

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