Effect of annealing temperature on the electrical and optical properties of nanocrystalline selenium thin films

Journal of Optoelectronics and Advanced Materials

Volumn 8, Issue 4, 2006, Pages 1352-1355

  Roy, R ^a   Choudhary, V S ^a   Patra, M K ^a   Pandya, A ^a  

^a DEFENCE LABORATORY   (India)

Author keywords

Activation energy; Annealing; Blue shift; Selenium; Thin films

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BLUE SHIFT; CRYSTALLINITY; ENERGY GAP; GRAIN SIZE AND SHAPE; NANOCRYSTALS; OPTICAL BAND GAPS; SELENIUM; SUBSTRATES; THERMAL EVAPORATION; THIN FILMS;

ANNEALING TEMPERATURES; AVERAGE GRAIN SIZE; EFFECT OF ANNEALING; ELECTRICAL AND OPTICAL PROPERTIES; POLYCRYSTALLINE STRUCTURE; SELENIUM THIN FILMS; THERMAL EVAPORATION TECHNIQUE; TRANSMITTANCE AND REFLECTANCES;

OPTICAL FILMS;

EID: 33748195028     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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