Record high saturation output power (+20dBm) and low NF (6.0dB) polarisation-insensitive MQW-SOA module

Electronics Letters

Volumn 42, Issue 18, 2006, Pages 1059-1060

  Tanaka, S ^a   Tomabechi, S ^a   Uetake, A ^a   Ekawa, M ^a   Morito, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC VARIABLES CONTROL; GAIN MEASUREMENT; LIGHT AMPLIFIERS; POLARIZATION; SEMICONDUCTOR DEVICES; SPURIOUS SIGNAL NOISE;

MULTIPLE QUANTUM WELL ACTIVE LAYER; OPTICAL AMPLIFIER MODULE; POLARISATION-INSENSITIVE SEMICONDUCTORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33748121616     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20061683     Document Type: Article

References (7)

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6. Magari, K., Okamoto, M., Suzuki, Y., Sato, K., Noguchi, Y., and Mikami, O.: ' Polarization-insensitive optical amplifier with tensile-strained-barrier MQW structure ', IEEE J. Quantum Electron., 1994, 30, (3), p. 695-702 10.1109/3.286156 0018-9197
7. Borghesani, A., Fensom, N., Scott, A., Crow, G., Johnston, L., King, J., Rivers, L., Cole, S., Perrin, S., Scrase, D., Bonfrate, G., Ellis, A., Lealman, I., Crouzel, G., Cole, S., Chun, L.H.K., Lupu, A., Mahe, E., and Maigne, P.: ' High saturation output power (>16.5dBm) and low noise figure (<6dB) semiconductor optical amplifier for C-band operation ', Tech Dig. OFC'03, Atlanta, GA, USA, 2003, p. 534-536