Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering

Superlattices and Microstructures

Volumn 40, Issue 3, 2006, Pages 137-143

  Zhou, Shengqiang ^a   Wu, M F ^a   Yao, S D ^a   Zhang, B S ^b   Yang, H ^b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Nitride semiconductors; Rutherford backscattering channeling; Superlattice; Transmission electron microscopy; X ray diffraction

Indexed keywords

GALLIUM NITRIDE; LATTICE CONSTANTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ELASTIC STRAINS; NITRIDE SEMICONDUCTORS; RUTHERFORD BACKSCATTERING/CHANNELING;

SUPERLATTICES;

EID: 33748058158     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.06.010     Document Type: Article

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