Direct determination of impurities in high purity silicon carbide by inductively coupled plasma optical emission spectrometry using slurry nebulization technique

Analytica Chimica Acta

Volumn 577, Issue 2, 2006, Pages 288-294

  Wang, Zheng ^a,b   Qiu, Deren ^c   Ni, Zheming ^d   Tao, Guangyi ^a   Yang, Pengyuan ^c  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c FUDAN UNIVERSITY   (China)

^d RESEARCH CENTER FOR ECO ENVIRONMENTAL SCIENCES   (China)

Author keywords

Inductively coupled plasma optical emission spectrometry; Polyethylene imine; Silicon carbide; Slurry introduction

Indexed keywords

EMISSION SPECTROSCOPY; IMPURITIES; INDUCTIVELY COUPLED PLASMA; POLYETHYLENES; SCANNING ELECTRON MICROSCOPY; SLURRIES;

INDUCTIVELY COUPLED PLASMA OPTICAL EMISSION SPECTROMETRY; LIMITS OF DETECTION (LODS); POLYETHYLENE IMINE (PEI); SIGNAL STABILITY TESTING;

SILICON CARBIDE;

ALUMINUM; CALCIUM; CHROMIUM; COPPER; IRON; MAGNESIUM; MANGANESE; NICKEL; POLYETHYLENEIMINE; SILICON CARBIDE; TITANIUM;

ANALYTIC METHOD; AQUEOUS SOLUTION; ARTICLE; CALIBRATION; CHEMICAL ANALYSIS; CHEMICAL PROCEDURES; CONCENTRATION (PARAMETERS); INDUCTIVELY COUPLED PLASMA OPTICAL EMISSION SPECTROMETRY; MASS SPECTROMETRY; NEBULIZATION; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; ZETA POTENTIAL;

EID: 33748039419     PISSN: 00032670     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.aca.2006.06.043     Document Type: Article

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