Boron segregation control in silicon crystal ingots grown in Czochralski process

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 665-669

  Sim, Bok Cheol ^a   Kim, Kwang Hun ^a   Lee, Hong Woo ^a  

^a Crystal Growth Technology Team   (South Korea)

Author keywords

A1. Distribution coefficient; A1. Dopant concentration; A2. Czochralski method; B2. Semiconducting silicon

Indexed keywords

BORON; CRYSTAL GROWTH; INGOTS; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING;

CRYSTAL ROTATION; CZOCHRALSKI METHOD; DISTRIBUTION COEFFICIENT; DOPANT CONCENTRATION;

SEMICONDUCTING SILICON;

EID: 33747796015     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.02.003     Document Type: Article

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