Parallel simulation of GaAs MESFET semiconductor devices with adaptive meshing on a transputer network

Proceedings of the 2nd Euromicro Workshop on Parallel and Distributed Processing, PDP 1994

Volumn , Issue , 1994, Pages 190-195

  Tsang Ping, C S ^a   Barry, D M ^a   Snowden, C M ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

Adaptive meshing; MESFET; Parallel algorithms; Semiconductor; Simulation; Transputer

Indexed keywords

FINITE DIFFERENCE METHOD; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; ITERATIVE METHODS; MEMORY ARCHITECTURE; MESSAGE PASSING; NUMERICAL METHODS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE;

ADAPTIVE MESHING; ENERGY-TRANSPORT; FINITE-DIFFERENCE DISCRETIZATION; GAAS MESFET; MESFETS; PARALLEL IMPLEMENTATIONS; PARALLEL SIMULATIONS; SIMULATION; TRANSPORT MODELLING; TRANSPUTER;

MESFET DEVICES;

EID: 33747659870     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EMPDP.1994.592489     Document Type: Conference Paper

References (8)

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3. T.M. Barton, Characterisation of the physical behaviour of GaAs MESFETs, PhD Thesis, Leeds University, 1988.
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