Numerical simulation of effect of methyltrichlorosilane flux on isothermal chemical vapor infiltration process of C/SiC composites

Journal of the American Ceramic Society

Volumn 89, Issue 9, 2006, Pages 2762-2768

  Wei, Xi ^a   Cheng, Laifei ^a   Zhang, Litong ^a   Xu, Yongdong ^a   Zeng, Qingfeng ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DENSIFICATION; FINITE ELEMENT METHOD; INFILTRATION; MATHEMATICAL MODELS; SILICON CARBIDE; SILICON COMPOUNDS;

CONCENTRATION DISTRIBUTION; INFILTRATION RATE; ISOTHERMAL CHEMICAL VAPOR INFILTRATION (ICVI); METHYLTRICHLOROSILANE (MTS);

COMPOSITE MATERIALS;

EID: 33747619852     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2006.01161.x     Document Type: Article

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