Temperature dependence of the first-order Raman scattering in silicon nanowires

Scripta Materialia

Volumn 55, Issue 2, 2006, Pages 183-186

  Niu, Junjie ^a,b   Sha, Jian ^b,c   Yang, Deren ^b  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b ZHEJIANG UNIVERSITY   (China)

^c ZHEJIANG UNIVERSITY   (China)

Author keywords

Raman scattering; Silicon nanowires; Temperature dependence

Indexed keywords

CRYSTALS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHONONS; RAMAN SCATTERING; THERMAL EFFECTS;

CRYSTAL QUALITY; PHONON CONFINEMENT MODEL; SILICON NANOWIRES; TEMPERATURE DEPENDENCE;

SILICON;

EID: 33747484928     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2006.03.060     Document Type: Article

References (28)

1. Cui Y., and Lieber C.M. Science 291 (2001) 851
2. Niu J.J., Sha J., Ma X.Y., Xu J., and Yang D.R. Chem. Phys. Lett. 367 (2003) 528
3. Shi W.S., Peng H.Y., Zheng Y.F., Wang N., Shang N.G., Pan Z.W., Lee C.S., and Lee S.T. Adv. Mater. 12 (2000) 1343
4. Yu D.P., Bai Z.G., Ding Y., Hang Q.L., Zhang H.Z., Wang J.J., Zou Y.H., Qian W., Xiong G.C., Zhou H.T., and Feng S.Q. Appl. Phys. Lett. 72 (1998) 3458
5. Richter H., Wang Z.P., and Ley L. Solid State Commun. 39 (1981) 625
6. Campbell I.H., and Fauchet P.M. Solid State Commun. 58 (1986) 739
7. Zi J., Zhang K.M., and Xie X.D. Phys. Rev. B 55 (1997) 9264
8. Li B.B., Yu D.P., and Zhang S.L. Phys. Rev. B 59 (1999) 1645
9. Wang R.P., Zhou G.W., Liu Y.L., Pan S.H., Zhang H.Z., Yu D.P., and Zhang Z. Phys. Rev. B 61 (2000) 16827
10. Qi J.F., White J.M., Belcher A.M., and Masumoto Y. Chem. Phys. Lett. 372 (2003) 763
11. Bhattacharyya S., and Samui S. Appl. Phys. Lett. 84 (2004) 1564
12. Gupta R., Xiong Q., Adu C.K., Kim U.J., and Eklund P.C. Nano Lett. 3 (2003) 627
13. Hart T.R., Aggarwal R.L., and Lax B. Phys. Rev. B 1 (1970) 638
14. Konstantinovic M.J., Bersier S., Wang X., Hayne M., Lievens P., Silverans R.E., and Moshchalkov V.V. Phys. Rev. B 66 (2002) 161311
15. Cerqueira M.F., and Ferreira J.A. J. Mater. Proc. Technol. 92-93 (1999) 235
16. Duong P.H., Phan H.K., Tam N.T.T., Thanh D.X., Nghia N.X., and Lavallard P. J. Luminesc 87-89 (2000) 353
17. Mavi H.S., Prusty S., Shukla A.K., and Abbi S.C. Thin Solid Films 425 (2003) 90
18. Piscanec S., Ferrari A.C., Cantoro M., Hofmann S., Zapien J.A., Lifshitz Y., Lee S.T., and Robertson J. Mater. Sci. Eng. C 23 (2003) 931
19. Piscanec S., Cantoro M., Ferrari A.C., Zapien J.A., Lifshitz Y., Lee S.T., Hofmann S., and Robertson J. Phys. Rev. B 68 (2003) 241312
20. Bergman L., Chen X.B., Morrison J.L., Huso J., and Purdy A.P. J. Appl. Phys. 96 (2004) 675
21. Zhang R.Q., Chu T.S., Cheung H.F., Wang N., and Lee S.T. Mater. Sci. Eng. C 16 (2001) 31
22. Niu J.J., Sha J., and Yang D.R. Physica E 23 (2004) 131
23. Volz S.G., and Chen G. Appl. Phys. Lett. 75 (1999) 2056
24. Li D.Y., Wu Y.Y., Kim P., Shi L., Yang P.D., and Majumdar A. Appl. Phys. Lett. 83 (2003) 2934
25. Shuker R., and Gammon R.W. Phys. Res. Lett. 25 (1970) 222
26. Balkanski M., Wallis R.F., and Haro E. Phys. Rev. B 28 (1983) 1928
27. Kimura Y., and Katoda T. Appl. Surf. Sci. 117-118 (1997) 790
28. Niu J.J., Sha J., Yang Q., and Yang D.R. Jpn. J. Appl. Phys. 43 (2004) 4460