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Volumn 89, Issue 7, 2006, Pages

Manganese impurities in boron nitride

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETISM; IMPURITIES; MAGNETIC MOMENTS; MANGANESE; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTITUTION REACTIONS;

EID: 33747451295     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2266930     Document Type: Conference Paper
Times cited : (18)

References (17)
  • 12
    • 0003554309 scopus 로고
    • Landolt-Bönstein, New series, Group 111, edited by O. Madelung, M. Schulz, and H. Weiss (Springer, New York)
    • Semiconductors. Physis of group IV Elements and III-IV Compounds, Landolt-Bönstein, New series, Group 111, Vol. 17, edited by O. Madelung, M. Schulz, and H. Weiss (Springer, New York, 1982).
    • (1982) Semiconductors. Physis of Group IV Elements and III-IV Compounds , vol.17
  • 13
    • 33747458173 scopus 로고    scopus 로고
    • note
    • Those constrains did not affect the final spin configuration of Mn in GaN and GaAs. In terms of energy, relaxing those constrains leads to energy gains of less than 0.3 eV.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.