Realization of 20 GHz directly modulated 1.55 μm DFB lasers using partially strain compensated quantum wells structures

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2005, Issue , 2005, Pages 551-553

  Parillaud, O ^a   Van Dijk, F ^a   Vodjdani, N ^a  

^a THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DISTRIBUTED FEEDBACK LASERS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; X RAY DIFFRACTION;

COMPENSATED QUANTUM WELLS STRUCTURES; GAINASP; PHOTOLUMINESCENCE MAPPING; QUANTUM WELLS STRUCTURES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33747431874     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517556     Document Type: Conference Paper

References (4)

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2. S. Murata, K. Naniwae, J. Shimizu, M. Nido, A. Tomita and A. Suzuki, "High-Frequency modulation characteristics in 1.5 μm compressively starined multiquantum well lasers with large number of wells." Electronics Letters, vol. 28, No. 15, 16 July 1992.
3. K. Uomi, M. Aoki, T. Tsuchya and A. Takai, "Dependence of High-Speed Properties on the number of Quantum Wells in 1.55 μm InGaAs-InGaAsP MQW /4-shifted DFB Lasers." Journal of quantum electronics, vol. 29, No. 2, February 1993.
4. F. Van Dijk, R. Boula-Picard, O. Parillaud, A. Enard, J-P. Plaze, C. Fourdin, N. Vodjdani, "Ku-band microwave optical emitter based on a directly modulated DFB laser." Int. Topical Meeting on Microwave Photonics, Ogunquit, USA, 4-6 October 2004.