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Volumn 2005, Issue , 2005, Pages 347-350

Low power (51mW per flip-flop) CML static divider implemented in scaled 0.25 μm emitter-width InP DHBTs

Author keywords

[No Author keywords available]

Indexed keywords

STATIC CML FREQUENCY DIVIDER; STATIC DIVIDER; TOGGLE RATE;

EID: 33747420982     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517498     Document Type: Conference Paper
Times cited : (7)

References (9)
  • 1
    • 21644479910 scopus 로고    scopus 로고
    • Super-scaled InP HBTs for 150 GHz circuits
    • IEDM '03 Technical Digest, 8-10 Dec.
    • J.C. Zolper, "Super-scaled InP HBTs for 150 GHz circuits," Electron Devices Meeting, 2003, IEDM '03 Technical Digest, 8-10 Dec. 2003, pp. 30.1.1 - 30.1.4.
    • (2003) Electron Devices Meeting, 2003
    • Zolper, J.C.1
  • 2
    • 4544286145 scopus 로고    scopus 로고
    • Lateral scaling of 0.25mm InP/InGaAs SHBTs with InAs emitter cap
    • Sept
    • W. Hafez and M. Feng, "Lateral scaling of 0.25mm InP/InGaAs SHBTs with InAs emitter cap," Electronics Letters, vol. 40, no. 18, pp.1151-3, Sept 2004.
    • (2004) Electronics Letters , vol.40 , Issue.18 , pp. 1151-1153
    • Hafez, W.1    Feng, M.2
  • 3
    • 21644476213 scopus 로고    scopus 로고
    • Patterned n+ Implant into InP Substrates for HBT Subcollector
    • Accepted for publication
    • M. Chen, et al., "Patterned n+ Implant into InP Substrates for HBT Subcollector," Accepted for publication in IEEE Transaction of Electron Devices.
    • IEEE Transaction of Electron Devices
    • Chen, M.1
  • 4
    • 3943092602 scopus 로고    scopus 로고
    • Self-aligned InP DHBT with ft and fmax over 300 GHz in a new manufacturable technology
    • August
    • Gang He et al. "Self-Aligned InP DHBT with ft and fmax over 300 GHz in a New Manufacturable Technology," IEEE Electron Device Letters, Vol. 25, No. 8, August 2004 pp 520-522
    • (2004) IEEE Electron Device Letters , vol.25 , Issue.8 , pp. 520-522
    • He, G.1
  • 5
    • 21644451322 scopus 로고    scopus 로고
    • Transistor and circuit design for 100-200 GHz ICs
    • Oct
    • M. J. W. Rodwell, "Transistor and Circuit Design for 100-200 GHz ICs", 2004 IEEE CSIC Symposium, Oct 2004 pp. 207-210
    • (2004) 2004 IEEE CSIC Symposium , pp. 207-210
    • Rodwell, M.J.W.1
  • 7
    • 21644443368 scopus 로고    scopus 로고
    • 3.3 ps SiGe bipolar technology
    • J Bock et al., "3.3 ps SiGe Bipolar Technology" IEDM 2004 Proceedings pp 255-258
    • IEDM 2004 Proceedings , pp. 255-258
    • Bock, J.1
  • 8
    • 21644473859 scopus 로고    scopus 로고
    • A low power (45mW/latch) static 150GHz CML divider
    • Oct
    • D A Hitko et al "A Low Power (45mW/latch) Static 150GHz CML Divider", 2004 IEEE CSIC Symposium, Oct 2004pp. 167-170
    • (2004) 2004 IEEE CSIC Symposium , pp. 167-170
    • Hitko, D.A.1
  • 9
    • 21644435770 scopus 로고    scopus 로고
    • First demonstration of sub-0.25mm-width emitter InP-DHBTs with >400 GHz ft and >400 GHz fmax
    • T Hussain "First demonstration of sub-0.25mm-width emitter InP-DHBTs with >400 GHz ft and >400 GHz fmax," IEDM 2004 Proceedings pp 553-556
    • IEDM 2004 Proceedings , pp. 553-556
    • Hussain, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.