Thermoelectric properties of ZrNiSn based half Heusler compounds

International Conference on Thermoelectrics, ICT, Proceedings

Volumn 2005, Issue , 2005, Pages 339-342

  Muta, Hiroaki ^a   Yamaguchi, Takato ^a   Kurosaki, Ken ^a   Yamanaka, Shinsuke ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONDUCTIVITY; NICKEL; SUBSTITUTION REACTIONS; THERMOELECTRICITY; TIN; ZIRCONIUM;

HEUSLER COMPOUNDS; ROOM TEMPERATURE; SEEBECK COEFFICIENT; SPARK PLASMA SINTERING (SPS);

INTERMETALLICS;

EID: 33747420699     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICT.2005.1519956     Document Type: Conference Paper

References (13)

1. C. Uher, J. Yang, S. Hu, "Transport properties of pure and doped MNiSn (M=Zr, Hf)", Physical Review B, Vol. 59, No. 13 (1999), pp. 8615-8621.
2. H. Hohl, A. P Ramirez, C. Goldmann, G. Ernst, "Efficient dopants for ZrNiSn-based thermoelectric materials," J. Phys. Condens. Matter, Vol. 11 (1999), pp. 1697-1709.
3. th Intl. Conf. on thermoelectrics, (1997), pp. 485-488.
4. th Intl. Conf. on thermoelectrics, (1999), pp. 340-343.
5. S. Katsuyama, H. Matsushima and M. Ito, "Effect of substitution for Ni by Co and/or Cu on the thermoelectric properties of half-Heusler ZrNiSn", J. Alloys Compd, Vol. 385 (2004), pp. 232-237.
6. K. Kurosaki, H. Muta and S. Yamanaka, "Thermoelectric properties of titanium-based half-Heusler compounds", J. Alloys Compd, Vol. 384 (2004), pp. 51-56.
7. Y. Xia, V. Ponnambalam, S. Bhattacharya, A. L. Pope, S. J. Poon, T. M. Tritt, "Electrical trasnport properties of TiCoSb half-Heusler phases that exhibit high resisitvity" J. Phys. Condens. Matter, Vol. 13 (2001), pp. 77-89.
8. K. Mastronardi, D. Young, C. -C. Wang, P. Khalifah, R. J. Cava, "Antimonides with the half-Heusler structure: New thermoelectric matrials" Appl. Phys. Letter, Vol. 74, No. 10 (1999), pp. 1415-1417.
9. Q. Shen, L. Chen, T. Goto, T. Hirai, J. Yang, G. P. Meisner, C. Uher, "Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds", Appl. Phys. Letter, Vol. 79 (2001), pp. 4165-4167.
10. J. Yang, G. P. Meisner, "Strain field fluctuation effects on lattice thermal conductivity of ZrNiSn-based thermoelectric compounds", Appl. Phys. Letter, Vol. 85 (2004), pp. 1140-1142.
11. S. Sakurada, N. Shutoh, "Effect of Ti substitution on the thermoelectric properties of (Zr, Hf)NiSn half-Heusler compounds", Appl. Phys. Letter, Vol. 86 (2005), pp. 082105.
12. H. Inaba, T. Yamamoto, Netsu Sokutei, Vol. 10 (1983), pp. 132.
13. F. G. Aliev, V. V. Kozyrkov, V. V. Moshchalkov, R. V. Scolozdra, K. Durczewski, "Narrow band in the intermetallic compound MNiSn (M=Ti, Zr, Hf)", Z. Phys. B, Vol. 80 (1990), pp. 353-357.