Low noise W-band MMMIC amplifier using 50nm InP technology for millimeterwave receivers applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2005, Issue , 2005, Pages 523-525

  Elgaid, K ^a   McLelland, H ^a   Stanley, C R ^a   Thayne, I G ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE AMPLIFIERS; MILLIMETER WAVE DEVICES; SEMICONDUCTING INDIUM PHOSPHIDE;

LOW NOISE AMPLIFIERS; MILLIMETERWAVE RECEIVERS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 33747393275     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2005.1517548     Document Type: Conference Paper

References (4)

1. Duh,K.H.G.;Chao,P.C.;Liu,S.M.J.;Ho,P.;Kao,M.Y.;Balling all,J.M. "A super low-noise 0.1 μm T-gate InAlAs-InGaAs-InP HEMT" Microwave and Guided Wave Letters, IEEE , Volume: 1, Issue: 5, May 1991, Pages:114-116.
2. th, 2004
3. K. Elgaid, H. Zhou, C.D.W. Wilkinson and I.G. Thayne, "Low temperature high density Si3N4 MIM capacitor technology for MMMIC and RF-MEMs applications", Microelectronic Engineering Journal, Volumes 73-74 (June 2004) pp. 452-455
4. Y.Chen, D.Macintyre, X.Cao, E.Boyd, D.Moran, H.McLelland, C.Stanley, I.Thayne, S.Thoms, "The fabrication of ultra short T-gates using a PMMA/LOR/UVTII resist stack", 47th International Conference on Electron, Ion, end Photon Beam Technology and Nanofabrication. May2003 Tampa,USA.