Electrical properties of the CdS/InP heterostructures for photovoltaic applications

Thin Solid Films

Volumn 511-512, Issue , 2006, Pages 468-472

  Purica, M ^a   Budianu, E ^a   Rusu, E ^b   Arabadji, P ^b  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b INSTITUTE OF APPLIED PHYSICS   (Moldova)

Author keywords

CdS InP; Charge transport; Heterojunction; Opto electrical parameters; Tunneling

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ELECTRON TUNNELING; OPTOELECTRONIC DEVICES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

CDS/INP; CHARGE CARRIER TUNNELING; CHARGE TRANSPORT; OPTO-ELECTRICAL PARAMETERS;

HETEROJUNCTIONS;

EID: 33747393235     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.200     Document Type: Article

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