First experimental verification of collection length limited gate induced drain leakage

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 155-158

  Mii, T ^a   Kleinhenz, R ^a   Noble, W ^a   Johnson, J ^a   Bryant, A ^a   Jaffe, M ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLLECTION LENGTHS; CURRENT BEHAVIORS; EXPERIMENTAL VERIFICATION; GATE INDUCED DRAIN LEAKAGES; LOGIC APPLICATIONS; STANDBY POWER; THERMAL GENERATION; UNIQUE FEATURES;

ELECTRON DEVICES;

EID: 33747385933     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307331     Document Type: Conference Paper

References (4)

1. S. Banerjee, W. Richardson. J. Coleman, and A. Chaltcrjec, "A new three-terminal tunnel device, " IEEE Electron Device Lett., vol. EDL-8. pp 347-349, Aug. 1987.
2. I-C. Chen, C. W. Teng, D. J. Coleman, and A. Nishimura, "Interface-trap enhanced gate-induced leakage current in MOSFET. " IEEE Electron Device Lett., vol. EDL-10, pp. 216-218, May 1989.
3. C. H. Han and K. Kim, "Leakage mechanisms in the heavily doped gated diode structure, " IEEE Electron Device Lett., vol. EDL-12. pp. 74-76, F3b. 1991.
4. W. P. Noble, S. H. Voldman, and A. Bryant, "The effects of gate field on the leakage characteristics of heavily doped junctions, " IEEE Trans. Electron Devices, vol. 36, no. 4. pp. 720-726. 1989.