메뉴 건너뛰기




Volumn 789, Issue , 1987, Pages 54-59

Millimeter-wave generation using sideband locked lasers

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; III-V SEMICONDUCTORS; LOCKS (FASTENERS); OPTICAL INSTRUMENTS;

EID: 33747328527     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.940719     Document Type: Conference Paper
Times cited : (1)

References (9)
  • 1
    • 0022111938 scopus 로고
    • 35 GHz microwave signal generation with an injection-locked laser diode
    • August 29
    • Goldberg, L., Yurek, A. M., Taylor, H. F., and Weller, J. F. "35 GHz Microwave Signal Generation with an Injection-Locked Laser Diode." Electron/Lett., vol. 21. pp. 814-815, August 29, 1985.
    • (1985) Electron/Lett. , vol.21 , pp. 814-815
    • Goldberg, L.1    Yurek, A.M.2    Taylor, H.F.3    Weller, J.F.4
  • 2
    • 0008784978 scopus 로고
    • High Q-factor resonators in microstrip
    • Troughton, P., "High Q-factor Resonators in Microstrip " Electron. Lett., vol. 4, pp. 520-522, 1968.
    • (1968) Electron. Lett. , vol.4 , pp. 520-522
    • Troughton, P.1
  • 3
    • 85024179215 scopus 로고
    • Measurement techniques in microstrip
    • Troughton, P., "Measurement Techniques in Microstrip, Electron. Lett., vol. 5, pp. 25-26, 1969.
    • (1969) Electron. Lett. , vol.5 , pp. 25-26
    • Troughton, P.1
  • 5
    • 36549099313 scopus 로고
    • AlGaAs/GaAs PIN photodiode/preamplifier monolithic photoreceiver integrated on a semi-insulating GaAs substrate
    • May 15
    • Wada, O. et al., "AlGaAs/GaAs PIN Photodiode/Preamplifier Monolithic Photoreceiver Integrated on a Semi-insulating GaAs Substrate, ' Appl. Phys. Lett., vol. 46, pp. 981-983, May 15, 1985.
    • (1985) Appl. Phys. Lett. , vol.46 , pp. 981-983
    • Wada, O.1
  • 6
    • 3042997164 scopus 로고
    • High-speed monolithically integrated GaAs photoreceiver using a metal-semiconductor-metal photodi-ode, 1
    • December 1
    • Ito, M. et al., "High-speed Monolithically Integrated GaAs Photoreceiver Using a Metal-Semiconductor-Metal Photodi-ode, 1' Appl. Phys. Lett., vol. 41, pp. 1129-1131, December 1, 1985.
    • (1985) Appl. Phys. Lett. , vol.41 , pp. 1129-1131
    • Ito, M.1
  • 7
    • 0019599838 scopus 로고
    • Photodetector (HIP) with picosecond optical response
    • August
    • Figueroa, L. and Slayman, C. W., Photodetector (HIP) with Picosecond Optical Response", IEEE Electron Device Letters, vol. EDL-2, pp. 208-210, August 1981.
    • (1981) IEEE Electron Device Letters , vol.EDL-2 , pp. 208-210
    • Figueroa, L.1    Slayman, C.W.2
  • 8
    • 0020810144 scopus 로고
    • High-speed schottky photdiode on semi-insulating GaAs, 1
    • September 15
    • Rav-Noy, Z. et al., "High-speed Schottky Photdiode on Semi-insulating GaAs, 1' Electron. Lett., vol. 19, pp. 753-754, September 15, 1983.
    • (1983) Electron. Lett. , vol.19 , pp. 753-754
    • Rav-Noy, Z.1
  • 9
    • 0005760191 scopus 로고
    • Picosecond InP optoelectronic switches
    • March 15
    • Foyt, A. G., Leonberger, F. J., and Williamson, R. C. "Picosecond InP Optoelectronic Switches", Appl. Phys. Lett., vol. 40, pp. 447-449, March 15, 1982.
    • (1982) Appl. Phys. Lett. , vol.40 , pp. 447-449
    • Foyt, A.G.1    Leonberger, F.J.2    Williamson, R.C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.