Universal optimal hole-doping concentration in single-layer high-temperature cuprate superconductors

Superconductor Science and Technology

Volumn 19, Issue 9, 2006, Pages 907-911

  Honma, T ^a,b   Hor, P H ^a  

^a University of Houston   (United States)

^b ASAHIKAWA MEDICAL COLLEGE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); PHYSICAL PROPERTIES; SEMICONDUCTOR DOPING; SUPERCONDUCTING DEVICES; SUPERCONDUCTING TRANSITION TEMPERATURE;

ELECTRONIC ENERGY; HIGH-TEMPERATURE SUPERCONDUCTORS; HOLE-DOPING CONCENTRATION; SUPERCONDUCTING DOME;

OXIDE SUPERCONDUCTORS;

EID: 33747314441     PISSN: 09532048     EISSN: 13616668     Source Type: Journal    
DOI: 10.1088/0953-2048/19/9/004     Document Type: Article

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