A millimeter wave monolithic VCO with an integrated heterojunction FET as a varactor

1994 24th European Microwave Conference, EUMA 1994

Volumn 2, Issue , 1994, Pages 1667-1672

  Ohata, Keiichi ^a   Funabashi, Masahiro ^a   Inoue, Takashi ^a   Onda, Kazuhiko ^a   Hosoya, Kenichi ^a   Maruhashi, Kenichi ^a   Kuzuhara, Masaaki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; CIRCUIT OSCILLATIONS; GALLIUM COMPOUNDS; HETEROJUNCTIONS; INDIUM COMPOUNDS; JUNCTION GATE FIELD EFFECT TRANSISTORS; OSCILLISTORS; VARACTORS; VARIABLE FREQUENCY OSCILLATORS;

ACTIVE ELEMENTS; DC BIASED; HETEROJUNCTION FET; LINEAR OSCILLATIONS; OUTPUT POWER; SCHOTTKY GATE; VARIABLE REACTANCE;

MILLIMETER WAVES;

EID: 33747295080     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1994.337458     Document Type: Conference Paper

References (5)

1. Y.Takimoto and T.JJiara,"Research Activities on Millimeter Wave Indoor Communication Systems in Japan," 1993 JEEE MTT-S Microwave Symp. Dig., pp.673-676.
2. M.G.McDermott et al,"Monolithic Ka Band VCO Using Quarter Micron GaAs MESFETs and Integrated High Q Varactors," 1990 IEEE MTT-S Microwave Symp. Dig., pp. 185-188.
3. D.Bosch et al,"A Compact Ka-Band MMIC Voltage Controlled Oscillator: Comparison of MESFET and HEMT Implimentations," 1991 IEEE MTT-S Microwave Symp. Dig., pp.827-830.
4. H.Wang et al,"Monolithic W-Band VCOs Using Pseudomorphic AlGaAs/InGaAs HEMT"s," 1992 IEEE GaAs IC Symp. Dig., pp.47-50.
5. M.Funabashi et al,"High Gain V-Band Heterojuncüon FET MMIC Power Amplifiers," 1993 JEEE GaAs IC Symp. Dig., pp.397-382.