Design, Fabrication, and Performance of Monolithic Dielectrically Stabilized PM-HFET Oscillators Up to 60 GHz

1994 24th European Microwave Conference, EUMA 1994

Volumn 1, Issue , 1994, Pages 361-365

  Guttich U ^a   Wenger, J ^b  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; GALLIUM COMPOUNDS; PHASE NOISE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

INGAAS/GAAS; KA BAND; LOW NOISE; MONOLITHIC CHIP; OUTPUT POWER;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 33747294592     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1994.337235     Document Type: Conference Paper

References (6)

1. J. Wenger and U. Guttich, "Ka- arnd W-Band PM-HFET DROs", 1993, IEEE, MGWL-6, pp. 191-193.
2. U. Guttich and J. Wenger, "Low phase noise PM-HFET oscillators with dielectric stabilization for Ka- and W-band freqencies", 1993, Proc. of 23. EuMC, pp. 394-396.
3. H. Wang, K.W. Chang, T.H. Chen, K.L. Tan, G.S. Dow, B. Allen, J. Berertz, "Monolithic W-band VGOs using AlGaAs/InGaAs/GaAs HEMTs", 1992, IEEE GaAs IC Symp. Dig., pp.47-50.
4. Y.Kwon, D.Pavlidis, T. Brock, D.C. Streit, "A D-band monolithic fundamental oscillator using InP-based HEMTs", 1993, IEEE MMWMC Symp. Dig., pp.49-52.
5. P.G. Wilson, "Monolithic 38 GHz dielectric resonator oscillator", 1991, IEEE MTT-S Dig., pp. 831-834.
6. D. Kajfez, "Elementary functions procesure simplifies dielectric resonators' deign", 1982, Microwave System News, pp. 133-140.