Mn incorporation in GaN thin layers grown by molecular-beam epitaxy

Semiconductor Science and Technology

Volumn 21, Issue 9, 2006, Pages 1348-1353

  Kocan, M ^a   Malindretos, J ^a   Roever, M ^a   Zenneck, J ^a   Niermann, T ^a   Mai, D ^a   Bertelli, M ^a   Seibt, M ^a   Rizzi, A ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; GALLIUM NITRIDE; MANGANESE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

GAMNN LAYERS; MN INCORPORATION; PYRAMIDAL STRUCTURE; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 33747291815     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/9/022     Document Type: Article

References (26)

1. Furdyna J K 1988 J. Appl. Phys. 64 R29
2. Ohno H 1998 Science 281 951
3. Zutic I, Fabian J and Das Sarma S 2004 Rev. Mod. Phys. 76 323
4. Pearton S J, Heo W H, Ivill M, Norton D P and Steiner T 2004 Semicond. Sci. Technol. 19 R59
5. Dietl T, Ohno H, Matsukura F, Cibert J and Ferrand D 2000 Science 287 1019
6. Sato K, Dederichs P H and Katayama-Yoshida H 2005 J. Supercond. 18 33
7. Dhar S, Brandt O, Trampert A, Friedland K J, Sun Y J and Ploog K H 2003 Phys. Rev. B 67 165205
8. Kane M H, Asghar A, Vestal C R, Strassburg M, Senawiratne J, Zhang Z J, Dietz N, Summers C J and Ferguson I T 2005 Semicond. Sci. Technol. 20 L5
9. Albrecht J D, van Nostrand J E, Claflin B, Liu Y, Nathan M I and Ruden P P 2005 J. Supercond. 18 69
10. Kim K H, Lee K J, Kim D J, Kim H J, Ihm Y E, Djayaprawira D, Takahashi M, Kim C S, Kim C G and Yoo S H 2003 Appl. Phys. Lett. 82 1775
11. Haider M B, Constantin C, Al-Brithen H, Yang H, Trifan E, Ingram D, Smitha A R, Kelly C V and Ijiri Y 2003 J. Appl. Phys. 93 5274
12. Kuroda S, Bellet-Amalric E, Giraud R, Marcet S, Cibert J and Mariette H 2003 Appl. Phys. Lett. 83 4580
13. Kuroda S, Bellet-Amalric E, Biquard X, Cibert J, Giraud R, Marcet S and Mariette H 2003 Phys. Status Solidi b 240 443
14. Liu C, Yun F and Morkoc H 2005 J. Mater. Sci., Mater. Electron. 16 555
15. Zywietz T, Neugebauer J and Scheffler M 1998 Appl. Phys. Lett. 73 487
16. Kocan M, Bertelli M, Dona E, Rizzi A, Grimm M and Lüth H 2002 Phys. Status Solidi c 0 196
17. Giraud R, Kuroda S, Marcet S, Biquard X, Bellet-Amalric E, Barbara B, Fruchart D, Ferrand D, Cibert J and Mariette H 2004 Europhys. Lett. 65 553
18. Novikov S V, Edmonds K W, Giddings A D, Wang K Y, Staddon C R, Campion R P, Gallagher B L and Foxon C T 2004 Semicond. Sci. Technol. 19 L13
19. Lee K J, Yu F C, Kim J A, Kim D J, Kim B G, Kang Y H, Kim H J and Ihm Y E 2004 Phys. Status Solidi b 241 1525
20. Zajac M, Doradzinski R, Gosk J, Szczytko J, Lefeld-Sosnowska M, Kaminska M, Twardowski A, Palczewska M, Grzanka E and Gebicki W 2001 Appl. Phys. Lett. 78 1276
21. Kim K H, Lee K J, Kim D J, Kim C S, Lee H C, Kim C G, Yoo S H, Kim H J and Ihm Y E 2003 J. Appl. Phys. 93 6793
22. Mahadevan P and Zunger A 2004 Phys. Rev. B 69 115211
23. Mahadevan P and Zunger A 2004 Appl. Phys. Lett. 85 2860
24. Dederichs P H 2005 Dilute magnetic semiconductors Magnetism goes Nano-Lecture Notes of 36th Spring School
25. Tersoff J, Johnson M D and Orr B G 1997 Phys. Rev. Lett. 78 282
26. Reed M J, Arkun F E, Berkman E A, Elmasry N A, Zavada J, Luen M O, Reed M L and Bedair S M 2005 Appl. Phys. Lett. 86 102504