Interface-Trap Enhanced Gate-Induced Leakage Current in MOSFET

IEEE Electron Device Letters

Volumn 10, Issue 5, 1989, Pages 216-218

  Nishimura, A ^b   Teng, C W ^a   Coleman, D J ^a  

^a TEXAS INSTRUMENTS   (United States)

^b Texas Instruments Japan Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33747290490     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.31725     Document Type: Article

References (9)

1. S. Banerjee, D. Coleman, W. Richardson, and A. Shah, “Leakage mechanism in the trench transistor DRAM cell,” IEEE Trans. Electron Devices, vol. 35, no. 1, p. 108, 1988.
2. J. Chen, T. Y. Chan, I. C. Chen, P. K. Ko, and C. Hu, “Subbreakdown drain leakage current in MOSFET,” IEEE Electron Device Lett., vol. EDL-8, no. 11, p. 515, 1987.
3. C. Chang and J. Lien, “Corner-field induced drain leakage in thin oxide MOSFETs,” in IEDM Tech. Dig., 1987, p. 714.
4. T. Y. Chan, J. Chen, P. K. Ko, and C. Hu, “The impact of gate-induced drain leakage current on MOSFET scaling,” in IEDM Tech. Dig., 1987, p. 718.
5. W. P. Nobel, A. Bryant, and S. H. Voldman, “Parasitic leakage in DRAM trench storage capacitor vertical gated diodes,” in IEDM Tech. Dig., 1987, p. 340.
6. J. G. Fossum, A. Ortiz-Conde, H. Shichijo, and S. K. Banerjee, “Anomalous leakage current in LPCVD polysilicon MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-32, no. 9, 1878, 1985.
7. L. B. Freeman and W. E. Dahlke, “Theory of tunneling into interface states,” Solid-State Electron.,vol. 13, p. 1483, 1970.
8. A. S. Grove, Physics and Technology of Semiconductor Devices. New York: 1967, p. 144.
9. G. A. Scoggan and T. P. Ma, “Effects of electron-beam radiation on MOS structures as influenced by the silicon dopant,” J. Appl. Phys., vol. 48, no. 1, p. 294, 1977.