메뉴 건너뛰기




Volumn 42, Issue 6, 1995, Pages 1047-1058

Theoretical and Experimental DC Characterization of InGaAs-Based Abrupt Emitter HBT's

Author keywords

[No Author keywords available]

Indexed keywords


EID: 33747289191     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.387236     Document Type: Article
Times cited : (33)

References (34)
  • 4
    • 0025430935 scopus 로고
    • A model-based comparison of AlInAs/GaInAs and InP/GalnAs HBT’s: A Monte Carlo study
    • R. Katoh and M. Kurata, “A model-based comparison of AlInAs/GaInAs and InP/GalnAs HBT’s: A Monte Carlo study,” IEEE Trans. Electron Devices, vol. 37, pp. 1245–1252, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 1245-1252
    • Katoh, R.1    Kurata, M.2
  • 5
    • 0000038629 scopus 로고
    • Monte Carlo studies of the effect of emitter junction grading on the electron transport in InA1As/InGaAs heterojunction bipolar transistors
    • J. Hu, D. Pavlidis, and K. Tomizawa, “Monte Carlo studies of the effect of emitter junction grading on the electron transport in InA1As/InGaAs heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. 39, pp. 1273–1281, 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 1273-1281
    • Hu, J.1    Pavlidis, D.2    Tomizawa, K.3
  • 7
    • 0021427091 scopus 로고
    • Boundary conditions for pn heterojunctions
    • M. S. Lundstrom, “Boundary conditions for pn heterojunctions,” SolidState Electron., vol. 27, pp. 491-496, 1984.
    • (1984) SolidState Electron. , vol.27 , pp. 491-496
    • Lundstrom, M.S.1
  • 8
    • 0001242402 scopus 로고
    • An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors
    • A. A. Grinberg, M. S. Shur, R. J. Fischer, and H. Morcoç, “An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1758–1765, 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 1758-1765
    • Grinberg, A.A.1    Shur, M.S.2    Fischer, R.J.3    Morcoç, H.4
  • 9
    • 0027559023 scopus 로고
    • Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition
    • K. Yang, J. R. East, and G. I. Haddad, “Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition,” Solid-State Electron., vol. 36, pp. 321–330, 1993
    • (1993) Solid-State Electron. , vol.36 , pp. 321-330
    • Yang, K.1    East, J.R.2    Haddad, G.I.3
  • 10
    • 0028381370 scopus 로고
    • Numerical study on the injection performance of AlGaAs/GaAs abrupt emitter HBT’s
    • K. Yang, J.R. East, G.I. Haddad, “Numerical study on the injection performance of AlGaAs/GaAs abrupt emitter HBT’s,” IEEE Trans. Electron Devices, vol. 41, pp. 138–147, 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 138-147
    • Yang, K.1    East, J.R.2    Haddad, G.I.3
  • 11
    • 0025468858 scopus 로고
    • Using constant base current as a boundary condition for one-dimensional AIGaAs/GaAs heterojunction bipolar transistor simulation
    • L. L. Liou and C. L. Huang, “Using constant base current as a boundary condition for one-dimensional AIGaAs/GaAs heterojunction bipolar transistor simulation,” Electron. Lett., vol. 26, pp. 1501–1503, 1990.
    • (1990) Electron. Lett. , vol.26 , pp. 1501-1503
    • Liou, L.L.1    Huang, C.L.2
  • 12
    • 0025491492 scopus 로고
    • Influence of base thickness on collector breakdown in abrupt AlInAs/InGaAs heterostructure bipolar transistors
    • B. Jalali, Y. K. Chen, R. N. Nottenburg, D. Sivco, D. A. Humphrey, and A. Y. Cho, “Influence of base thickness on collector breakdown in abrupt AlInAs/InGaAs heterostructure bipolar transistors,” IEEE Electron Device Lett., vol. 11, pp. 400–402, 1990.
    • (1990) IEEE Electron Device Lett. , vol.11 , pp. 400-402
    • Jalali, B.1    Chen, Y.K.2    Nottenburg, R.N.3    Sivco, D.4    Humphrey, D.A.5    Cho, A.Y.6
  • 13
    • 0026953307 scopus 로고
    • Temperature dependence of common emitter I-V and collector breakdown voltage characteristics in AlGaAs/GaAs and AIInAs/GaInAs HBT's grown by MBE
    • R. J. Malik, N. Chand, J. Nagle, R. W. Ryan, K. Alavi, and A. Y. Cho, “Temperature dependence of common emitter I-V and collector breakdown voltage characteristics in AlGaAs/GaAs and AIInAs/GaInAs HBT's grown by MBE,” IEEE Electron Device Lett., vol. 13, pp. 557–559, 1992.
    • (1992) IEEE Electron Device Lett. , vol.13 , pp. 557-559
    • Malik, R.J.1    Chand, N.2    Nagle, J.3    Ryan, R.W.4    Alavi, K.5    Cho, A.Y.6
  • 15
    • 0027187369 scopus 로고
    • Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors
    • H.-F. Chau, D. Pavlidis, J. Hu, and K. Tomizawa, “Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors,” IEEE Trans. Electron Devices, vol. 40, pp. 2–8, 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 2-8
    • Chau, H.-F.1    Pavlidis, D.2    Hu, J.3    Tomizawa, K.4
  • 16
    • 0000347401 scopus 로고
    • Energy-conservation considerations in the characterization of impact ionization in semiconductors
    • Y. Okuto and C. R. Crowell, “Energy-conservation considerations in the characterization of impact ionization in semiconductors,” Phys. Rev. B, vol. 6, pp. 3076–3081, 1972.
    • (1972) Phys. Rev. B , vol.6 , pp. 3076-3081
    • Okuto, Y.1    Crowell, C.R.2
  • 17
    • 0001516760 scopus 로고
    • Impact ionization rates for electrons and holes in Gao. 47Ino. 53 As
    • T. P. Pearsall, “Impact ionization rates for electrons and holes in Gao. 47Ino. 53 As,” Appl. Phys. Lett., vol. 36, pp. 218–220, 1980.
    • (1980) Appl. Phys. Lett. , vol.36 , pp. 218-220
    • Pearsall, T.P.1
  • 19
    • 0001361517 scopus 로고
    • Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements
    • L. W. Cook, G. E. Bulman, and G. E. Stillman, “Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements,” Appl. Phys. Lett., vol, 40, pp. 589–591, 1982.
    • (1982) Appl. Phys. Lett , vol.40 , pp. 589-591
    • Cook, L.W.1    Bulman, G.E.2    Stillman, G.E.3
  • 20
    • 0000908840 scopus 로고
    • A physics-based fitting and extrapolation method for measured impact ionization coefficients in in III- V semiconductors
    • H.-F. Chau and D. Pavlidis, “A physics-based fitting and extrapolation method for measured impact ionization coefficients in in III- V semiconductors,” J. Appl. Phys., vol. 72, pp. 531–538, 1992.
    • (1992) J. Appl. Phys. , vol.72 , pp. 531-538
    • Chau, H.-F.1    Pavlidis, D.2
  • 23
    • 0016069914 scopus 로고
    • Simple empirical relationship between mobility and carrier concentration
    • C. Hilsum, “Simple empirical relationship between mobility and carrier concentration,” Electron. Lett., vol. 10, pp. 259–260, 1974.
    • (1974) Electron. Lett. , vol.10 , pp. 259-260
    • Hilsum, C.1
  • 26
    • 36449005196 scopus 로고
    • On the carrier mobility in forward-biased semiconuctor barriers
    • M. Lundstrom and S. Tanaka, “On the carrier mobility in forward-biased semiconuctor barriers,” Appl. Phys. Lett., vol. 66, pp. 962–964, 1995.
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 962-964
    • Lundstrom, M.1    Tanaka, S.2
  • 27
    • 84948599941 scopus 로고    scopus 로고
    • Numerical study on the DC characteristics of InGaAs abrupt emitter HBT's using a self-consistent boundary condition approach
    • Charlottesville, VA
    • K. Yang, J. R. East, and G. I. Haddad, “Numerical study on the DC characteristics of InGaAs abrupt emitter HBT's using a self-consistent boundary condition approach,” in Proc. 1993 Int. Semicond. Device Res. Symp., Charlottesville, VA, pp. 551–554.
    • Proc. 1993 Int. Semicond. Device Res. Symp. , pp. 551-554
    • Yang, K.1    East, J.R.2    Haddad, G.I.3
  • 31
    • 0006104015 scopus 로고
    • Ohmic contact study for quantum effect transistors and heterojunction bipolar transistors with InGaAs contact layers
    • W. L. Chen, J. C. Cowles, G. I. Haddad, G. O. Munns, K. W. Eisenbeiser, and J. R. East, “Ohmic contact study for quantum effect transistors and heterojunction bipolar transistors with InGaAs contact layers,” J. Vac. Sci. Technol. B, vol. 10, pp. 2354–2360, 1992.
    • (1992) J. Vac. Sci. Technol. B , vol.10 , pp. 2354-2360
    • Chen, W.L.1    Cowles, J.C.2    Haddad, G.I.3    Munns, G.O.4    Eisenbeiser, K.W.5    East, J.R.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.