Correlation of Polysilicon Thin-Film Transistor Characteristics to Defect States via Thermal Annealing

IEEE Transactions on Electron Devices

Volumn 41, Issue 3, 1994, Pages 460-462

  Chem, Horng Nan ^a   Lee, Chung Len ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33747286932     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.275239     Document Type: Article

References (7)

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2. P. Migliorato and D. B. Meakin, “Material properties and characteristics of polysilicon transistors for large area electronics,” Applied Surface Sci., vol. 30, p. 353, 1987.
3. I-W. Wu, T. Y. Huang, W. B. Jackson, A. G. Lewis, and A. Chiang, “Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation,” IEEE Electron Device Lett., vol. 12, p. 181, 1991.
4. B. A. Khan and R. Pandya, “Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors,” IEEE Trans. Electron Devices, vol. 37, p. 1727, 1990.
5. K. Ono, T. Aoyama, N. Konishi, and K. Miyata, “Analysis of current-voltage characteristics of low-temperature-processed polysilicon thin-film transistors,” IEEE Trans. Electron Devices, vol. 39, p. 792, 1992.
6. H. J. Queisser and J. Werner, “Electrical and electronical properties of grain boundaries in silicon,” in Mat. Res. Soc. Symp. Proc., vol. 106, p. 53, 1988.
7. G. Fortunato and P. Migliorato, “Model for the above-threshold characteristics and threshold voltage in polycrystalline silicon transistors,” J. Appl. Phys., vol. 68, p. 2463, 1990.