RuO 2 /SiO 2 /Si and SiO 2 /porous Si/Si interfaces analysed by SIMS

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7058-7061

  Ćwil, Michał ^a,b   Konarski, Piotr ^a   Pajak, Michał ^b   Bieniek, Tomasz ^b   Kosiński, Andrzej ^c   Kaczorek, Krzysztof ^a  

^a TELE AND RADIO RESEARCH INSTITUTE   (Poland)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c INSTITUTE OF PHYSICAL CHEMISTRY   (Poland)

Author keywords

Charge build up effect; Depth profile analysis; Nanopores; Oxygen depletion; Porous silicon; Silicon oxide nanostructure; SIMS

Indexed keywords

ARGON; INTERFACES (MATERIALS); OXIDATION; SECONDARY ION MASS SPECTROMETRY; SOLUTIONS;

CHARGE BUILD-UP EFFECT; DEPTH PROFILE ANALYSIS; NANOPORES; OXYGEN DEPLETION; SILICON OXIDE NANOSTRUCTURE;

POROUS SILICON;

EID: 33747247601     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.215     Document Type: Article

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