A non-linear high-power mesfet amplifier model verified by waveform and load-pull measurements

43rd ARFTG Conference Digest - Spring 1994

Volumn , Issue , 1994, Pages 117-120

  Wei, C J ^a   Lan, Y ^a   Tkachenko, Y A ^a   Hwang, J C M ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIER MODELS; AMPLIFIER OUTPUT; EXPERIMENTAL VERIFICATION; INPUT POWER; LOAD CONDITION; LOAD-PULL MEASUREMENT; METAL SEMICONDUCTORS; SELF BIASING;

MESFET DEVICES;

EID: 33747214579     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ARFTG.1994.327067     Document Type: Conference Paper

References (5)

1. W. Struble, S. L. G. Chu, M. J. Schindler, Y. Tajima and J. Huang, "Modeling intermodulation distortion in GaAs MESFETs using pulsed I-V characteristics", in IEEE GaAs IC Symp. Technical Dig., 1991, pp. 179-182.
2. W. R. Curtice and M. Ettenberg, "Nonlinear GaAs FET model for use in the design of output circuit for power amplifiers", IEEE Trans. Microwave Theory Techniques, vol. 33, pp. 1383-1394, 1985.
3. Y. A. Tkachenko, C. J. Wei and J. C. M. Hwang, "Models for long bond wires and large multi-port capacitors", in Proc. IEEE Princeton Section Sarnoff Symp., 1993.
4. HP-EEsof, Westlake Village, California.
5. C. J. Wei, Y. A. Tkachenko and J. C. M. Hwang, "Non-invasive waveform probing for nonlinear network analysis", in IEEE MTT-S Int'l Microwave Symp. Dig., 1993, pp. 1347-1350.