-
1
-
-
1242335725
-
Nanoelectronics and information technology
-
Rainer W. (Ed), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
-
Bottger U., and Summerfeld S.R. Nanoelectronics and information technology. In: Rainer W. (Ed). Ferroelectric random access memories (2003), Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
-
(2003)
Ferroelectric random access memories
-
-
Bottger, U.1
Summerfeld, S.R.2
-
2
-
-
0141761422
-
A 64 Mbit embedded FeRAM utilizing a 130 nm, 5LM Cu/FSG logic process
-
McAdams H., Acklin R., Blake T., Fong J., Liu D., Madan S., et al. A 64 Mbit embedded FeRAM utilizing a 130 nm, 5LM Cu/FSG logic process. Proc VLSI Circ Dig (2003) 175
-
(2003)
Proc VLSI Circ Dig
, pp. 175
-
-
McAdams, H.1
Acklin, R.2
Blake, T.3
Fong, J.4
Liu, D.5
Madan, S.6
-
3
-
-
17644436357
-
Noble FeRAM technologies with MTP cell structure and BLT ferroelectric capacitors
-
Oh S.H., Hong S.K., Noh K.H., Kweon S.Y., Kim N.K., Yang Y.H., et al. Noble FeRAM technologies with MTP cell structure and BLT ferroelectric capacitors. Proc IEDM Technol Dig (2003) 835
-
(2003)
Proc IEDM Technol Dig
, pp. 835
-
-
Oh, S.H.1
Hong, S.K.2
Noh, K.H.3
Kweon, S.Y.4
Kim, N.K.5
Yang, Y.H.6
-
5
-
-
0141761512
-
Highly manufacturable and reliable 32 Mb FRAM technology with novel BC and capacitor cleaning process
-
Song Y.J., Joo H.J., Jang N.W., Kim H.H., Park J.H., Kang H.Y., et al. Highly manufacturable and reliable 32 Mb FRAM technology with novel BC and capacitor cleaning process. Proc VLSI Technol Dig (2003) 169
-
(2003)
Proc VLSI Technol Dig
, pp. 169
-
-
Song, Y.J.1
Joo, H.J.2
Jang, N.W.3
Kim, H.H.4
Park, J.H.5
Kang, H.Y.6
-
7
-
-
33745134614
-
Integration of MOCVD SBT stacked ferroelectric capacitors in a 0.35 μm
-
Maes D., Everaert J.L., Goux L., Lisoni J.G., Paraschiv V., Schwitters M., et al. Integration of MOCVD SBT stacked ferroelectric capacitors in a 0.35 μm. CMOS Technol Integr Ferroelectr 66 (2004) 71
-
(2004)
CMOS Technol Integr Ferroelectr
, vol.66
, pp. 71
-
-
Maes, D.1
Everaert, J.L.2
Goux, L.3
Lisoni, J.G.4
Paraschiv, V.5
Schwitters, M.6
-
8
-
-
33745169359
-
Scaling potential of pin-type 3-D SBT ferroelectric capacitors integrated in 0.18 μm CMOS technology
-
Goux L., Maes D., Lisoni J.G., Vander Meeren H., Paraschiv V., Haspeslagh L., et al. Scaling potential of pin-type 3-D SBT ferroelectric capacitors integrated in 0.18 μm CMOS technology. Microelectron Eng 83 10 (2006) 2027-2031
-
(2006)
Microelectron Eng
, vol.83
, Issue.10
, pp. 2027-2031
-
-
Goux, L.1
Maes, D.2
Lisoni, J.G.3
Vander Meeren, H.4
Paraschiv, V.5
Haspeslagh, L.6
-
9
-
-
33747196250
-
-
Lisoni JG, Maes D, Everaert JL, Johnson J, Paraschiv V, Haspeslagh L, et al. Oxygen barrier for stacked SBT-FeCAP on W-plug. In: International joint conference on the application of ferroelectrics, IFFF, Nara 2002;477.
-
-
-
-
10
-
-
0031077357
-
Metallization schemes for dielectric thin film capacitors
-
Al-Shareef H.N., Dimos D., Tuttle B.A., and Raymond M.V. Metallization schemes for dielectric thin film capacitors. J Mater Res 12 2 (1997) 347-354
-
(1997)
J Mater Res
, vol.12
, Issue.2
, pp. 347-354
-
-
Al-Shareef, H.N.1
Dimos, D.2
Tuttle, B.A.3
Raymond, M.V.4
-
11
-
-
33747189907
-
-
9. In: International symposium on integrated ferroelectrics, ISIF Geyongju 2004.
-
-
-
-
12
-
-
33747181505
-
-
15 switching cycle regime. In: International symposium on integrated ferroelectrics, ISIF Aachen 2000.
-
-
-
-
14
-
-
0036735424
-
3 thin films I. Dopant, illumination, and bias dependence
-
3 thin films I. Dopant, illumination, and bias dependence. J Appl Phys 92 (2002) 2680
-
(2002)
J Appl Phys
, vol.92
, pp. 2680
-
-
Grossmann, M.1
Lohse, O.2
Bolten, D.3
Boettger, U.4
Schneller, T.5
Waser, R.6
-
15
-
-
79953196690
-
Studien uber die anomalien im verhalten der dielectrika Ann D
-
Von Schweidler E.R. Studien uber die anomalien im verhalten der dielectrika Ann D. Physik 24 (1907) 711
-
(1907)
Physik
, vol.24
, pp. 711
-
-
Von Schweidler, E.R.1
-
16
-
-
33747189905
-
Interfacial layers and their effect on leakage current in MOCVD-deposited SBT thin films
-
Bachhofer H., Reisinger H., Steinlesberger G., Schroeder H., Nagel N., Mikolajick T., et al. Interfacial layers and their effect on leakage current in MOCVD-deposited SBT thin films. Integr Ferroelectr 39 1-4 (2001) 189-198
-
(2001)
Integr Ferroelectr
, vol.39
, Issue.1-4
, pp. 189-198
-
-
Bachhofer, H.1
Reisinger, H.2
Steinlesberger, G.3
Schroeder, H.4
Nagel, N.5
Mikolajick, T.6
-
18
-
-
84963444247
-
Thickness dependence of dc leakage current in lead zirconate-titanate (PZT) memories
-
Melnick B.M., Scott J.F., Araujo C.A., and McMillan L.D. Thickness dependence of dc leakage current in lead zirconate-titanate (PZT) memories. Ferroelectrics 135 1-4 (1992) 163-168
-
(1992)
Ferroelectrics
, vol.135
, Issue.1-4
, pp. 163-168
-
-
Melnick, B.M.1
Scott, J.F.2
Araujo, C.A.3
McMillan, L.D.4
-
19
-
-
33747155188
-
-
Wouters DJ, Willems GJ, Maes HE. EMF-8, Nijmegen, 1995.
-
-
-
-
20
-
-
0035423490
-
Polarization fatigue in ferroelectric films: basic experimental findings, phenomenological scenarios, and microscopic features
-
Tagantsev A.K., Stolichnov I., Colla E.L., and Setter N. Polarization fatigue in ferroelectric films: basic experimental findings, phenomenological scenarios, and microscopic features. J Appl Phys 90 3 (2001) 1387
-
(2001)
J Appl Phys
, vol.90
, Issue.3
, pp. 1387
-
-
Tagantsev, A.K.1
Stolichnov, I.2
Colla, E.L.3
Setter, N.4
-
21
-
-
1642536395
-
Studies of switching kinetics in ferroelectric thin films
-
Jiang A., Dawber M., Scott J.F., Wang C., Migliorato P., and Gregg M. Studies of switching kinetics in ferroelectric thin films. Jpn J Appl Phys 42 (2003) 6973
-
(2003)
Jpn J Appl Phys
, vol.42
, pp. 6973
-
-
Jiang, A.1
Dawber, M.2
Scott, J.F.3
Wang, C.4
Migliorato, P.5
Gregg, M.6
-
22
-
-
0002373464
-
Device models for PZT/Pt, BST/Pt, SBT/Pt, and SBT/Bi ferroelectric memories
-
Scott J.F., Watanabe K., Hartmann A.J., and Lamb R.N. Device models for PZT/Pt, BST/Pt, SBT/Pt, and SBT/Bi ferroelectric memories. Ferroelectrics 225 1-4 (1999) 83-90
-
(1999)
Ferroelectrics
, vol.225
, Issue.1-4
, pp. 83-90
-
-
Scott, J.F.1
Watanabe, K.2
Hartmann, A.J.3
Lamb, R.N.4
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